Substitution effects on ferroelectric,leakage current and anti‐fatigue characteristic of Bi4‐xSbxTi3O12 thin films

Bi_4‐xSb_xTi₃O₁₂ (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates by sol‐gel method. The effects of various Sb³⁺ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi_4‐xSb_xTi₃O₁₂ (x≠0) thin films prefer (117) orientation. The substitution Sb³⁺ for Bi³⁺ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi_4‐xSb_xTi₃O₁₂ films display exciting electric properties. Especially when x = 0.04, the film Bi_3.96Sb_0.04Ti₃O₁₂ has achieved the max 2Pr value of 87μC/cm². This film also has a better anti‐fatigue characteristic, which can be up to 10¹⁰ switching cycles without fatigue. The leakage current density improved with J = 8×10^?8 A/cm².