Study in the effect of annealing on hydrogen retention properties of C‐90%SiC films

Carbon‐rich silicon carbide (C‐90%SiC) films as hydrogen barriers were deposited on the surface of stainless steel substrates with magnetron sputtering, and then bombarded by argon ion beam. In order to remove the argon atoms reserved during films preparation, some samples with the prepared C‐90%SiC films were thermally annealed for 30 min at 473, 673 and 873 K in vacuum, respectively. These samples together with the un‐annealed ones were then irradiated by a 5 keV hydrogen ion beam. SEM was used to investigate the surface micrograph of those films and SIMS was used to measure the mass spectra of positive species and the depth distribution of argon and hydrogen in the samples. A remarkable decrease in hydrogen intensity in the substrates with annealing indicates that annealing for removing argon can effectively improve hydrogen retention properties of the C‐90%SiC films. Copyright © 2008 John Wiley & Sons, Ltd.