Interfacial characterization of chemical solution‐deposited thin films of PbSe on GaAs(100) |
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| Authors: | Michael Shandalov Avraham Rozenblat Nir Kedem Ronit Popovitz‐Biro Yuval Golan |
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| Institution: | 1. Department of Materials Engineering and the Ilse Katz, Institute for Nanoscience and Nanotechnology, Ben‐Gurion University of the Negev, Beer‐Sheva 84105, Israel;2. Intel Electronics Ltd, Fab18, Material Analysis laboratories, Kiryat‐Gat 82109, Israel;3. Electron Microscopy Unit, Weizmann Institute of Science, Rehovot 76100, Israel |
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| Abstract: | The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high‐resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x‐ray photoelectron spectroscopy (XPS) and energy‐filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga2O3 at the PbSe/GaAs interface. Copyright © 2008 John Wiley & Sons, Ltd. |
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| Keywords: | interface composition chemical deposition PbSe microstructure GaAs |
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