Infra-red free-carrier absorption due to impurity scattering in semiconducting quantum well structures |
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Authors: | N S Sankeshwar S S Kubakaddi B G Mulimani |
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Institution: | (1) Kittel Science College, 580 001 Dharwad, India;(2) Department of Physics, Karnatak University, 580 003 Dharwad, India |
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Abstract: | The theory of free-carrier absorption (FCA) is developed, in the extreme quantum limit when the carriers are assumed to populate
only the lowest quantized energy level, for quasi-two and one-dimensional semiconducting quantum well structures where the
carriers are scattered by ionized impurities. The radiation field is assumed to be polarized in the plane of the layer in
the quasi-two-dimensional case and along the length of the wire in the quasi-one-dimensional case. Expressions for FCA are
obtained for the cases where the impurities are either in the well (background impurities) or outside the well (remote impurities).
Variation of FCA is numerically studied with photon frequency and well width. |
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Keywords: | Optical properties quantum wells impurity scattering infra-red free-carrier absorption |
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