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空位在金刚石近(001)表面扩散的分子动力学模拟
引用本文:胡晓君,戴永兵,何贤昶,沈荷生,李荣斌.空位在金刚石近(001)表面扩散的分子动力学模拟[J].物理学报,2002,51(6):1388-1392.
作者姓名:胡晓君  戴永兵  何贤昶  沈荷生  李荣斌
作者单位:上海交通大学金属基复合材料国家重点实验室,上海200030
基金项目:国家自然科学基金 (批准号 :5 0 0 82 0 0 5 )资助的课题
摘    要:用分子动力学方法模拟了空位在金刚石近(001)表面的扩散过程,研究了温度对空位扩散的影响.结果表明,当温度为1000K左右时,位于近表面第二层上的空位开始向表面运动;当温度在1400—2000K时,空位完全扩散到表面.这与实验结果和其他计算结果符合得很好.同时发现,温度为1400—1800K时,空位的扩散经历了两次迁移运动,其分别对应了均方位移图中的两个极大值.在不施加任何约束的条件下得到了空位的动态扩散路径,空位在金刚石近(001)表面的扩散势垒约为042eV.并探讨了一定温度下空位数目增多及其不同排列 关键词: 金刚石 空位 扩散 分子动力学

关 键 词:金刚石  空位  扩散  分子动力学
收稿时间:2001-07-16
修稿时间:2001年7月16日

The vacancy diffusion near diamond (001) surface by molecular dynamics simulation
Hu Xiao-Jun,Dai Yong-Bing,He Xian-Chang,Shen He-Sheng and Li Rong-Bin.The vacancy diffusion near diamond (001) surface by molecular dynamics simulation[J].Acta Physica Sinica,2002,51(6):1388-1392.
Authors:Hu Xiao-Jun  Dai Yong-Bing  He Xian-Chang  Shen He-Sheng and Li Rong-Bin
Abstract:The diffusion process of the vacancy near diamond(001) surface and the effects of temperature on the vacancy diffusion were investigated by molecular dynamics simulation. The results show that when the temperature is about 1000K, the vacancy in the second layer begins to diffuse to the surface. In the 1400_2000K temperature range, the vacancy can migrate to the surface. This result is in a good agreeement with that of experiment and other calculation. In the temperature range of 1400_1800K, two migration stages are observed in the vacancy diffusion process, which correspond to two maximums in the mean square displacement curves. In addition, the vacancy diffusion path was obtained without any constraints exposed on the atoms and the calculated diffusion barrier of the vacancy near diamond(001) surface is about 0^42 eV. We also discussed the effects of vacancy number and different vacancy arrangement on vacancy diffusion at a certain temperature.
Keywords:diamond  vacancy  diffusion  molecular dynamics simulation  
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