Degradation of high-power semiconductor quantum-well lasers

A mechanism of degradation of semiconductor quantum-well lasers with a stripe contact more than 50 µm wide is proposed. This mechanism implies formation of several lasing channels at a carrier ambipolar diffusion length smaller than the contact width. The carrier diffusion length decreases with time due to the increase in the number of defects; as a result, the number of lasing channels increases and lasing spectrum is filled. The shape of the lasing spectrum can be used to predict the laser service life.