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Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding |
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| Authors: | CHEN Ting HONG Tao PAN Jiao-Qing CHEN Wei-Xi CHENG Yuan-Bing WANG Yang MA Xiao-Bo LIU Wei-Li ZHAO Ling-Juan RAN Guang-Zhao WANG Wei QIN Guo-Gang |
| Affiliation: | State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083State Key Laboratory of Functional Materials for Informatics, Laboratory of Nano Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
| Abstract: | A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9kA/cm2 and a slope efficiency of 0.02W/A. The 1542nm laser output exits mainly from the Si waveguide. |
| Keywords: | 42.55.Px 42.60.By 42.82.Fv |
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