Interband photoconductivity of Ge/Si structures with self-organized quantum rings |
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Authors: | O.A. Shegai V.I. Mashanov H.-H. Cheng O.P. Pchelyakov |
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Affiliation: | aInstitute of Semiconductor Physics, pr.Lavrentieva 13, Novosibirsk 630090, Russia;bCenter for Condensed Matter Sciences and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 106, Taiwan, Republic of China |
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Abstract: | At low temperatures a lateral photoconductivity (PC) of Ge/Si (1 0 0) self-organized quantum rings (QRs) structures as a function of interband light intensity has been investigated for different values of lateral voltage and temperature. In contrast to self-organized Ge/Si quantum dots (QDs) structures (grown at the same conditions) where the stepped PC was registered, for QRs structures essential smoothing of PC steps was observed. Such behavior is determined by decreasing of strain potential around QRs in conductive Si matrix due to a transfer of Ge atoms from the center of QDs to its periphery accompanied by Ge/Si intermixing. |
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Keywords: | Self-organized quantum dots Quantum rings Photoconductivity |
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