| Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method |
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| 引用本文： | 李百中,李鹏坤,张璐,田瑞丰,赛青林,潘明艳,王斌,陈端阳,刘有臣,夏长泰,齐红基.Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method[J].Chinese Optics Letters,2023(4):105-109. |
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| 作者姓名： | 李百中 李鹏坤 张璐 田瑞丰 赛青林 潘明艳 王斌 陈端阳 刘有臣 夏长泰 齐红基 |
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| 作者单位： | 1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences |
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| 基金项目： | supported by the National Natural Science Foundation of China (NSFC) (Nos. 51972319, 52002386, and 52072183)； |
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| 摘 要： | Sb-doped β-Ga2O3 crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 1016 to 8.10 × 1018 cm-3,the electronic mobility depicted a dec...
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