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Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress |
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| Authors: | Sun Wei-Wei;Zheng Xue-Feng;Fan Shuang;Wang Chong;Du Ming;Zhang Kai;Chen Wei-Wei;Cao Yan-Rong;Mao Wei;Ma Xiao-Hua;Zhang Jin-Cheng;Hao Yue |
| Institution: | a School of Microelectronics, Xidian University, Xi'an 710071, China;b Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
| Abstract: | |
| Keywords: | E-mode HEMTs gate overdrive electron injection impact ionization |
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