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Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps |
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| Authors: | Fang Zhong-Hui;Jiang Xiao-Fan;Chen Kun-Ji;Wang Yue-Fei;Li Wei;Xu Jun |
| Institution: | State Key Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093, China |
| Abstract: | |
| Keywords: | silicon nanocrystals memory different charging of electrons and holes oxide traps admittance-voltage characteristics |
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