Temperature dependence of mobility in scattering on point defects

Scattering amplitude in the field of a short-range force center is calculated using factorization of the potential. The results obtained are used to study the temperature dependence of charge-carrier mobility in the random field of chaotically distributed structural point defects.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 50–57, September, 1985.In conclusion, the author sincerely thanks V. L. Bonch-Burevich for his interest in the study and most valuable discussions.