| 功率GaAs MESFET小信号模型参数的提取（英） |
| |
| 引用本文： | 吴龙胜,刘佑宝.功率GaAs MESFET小信号模型参数的提取（英）[J].计算物理,2002,19(2):127-131. |
| |
| 作者姓名： | 吴龙胜 刘佑宝 |
| |
| 作者单位： | 西安微电子技术研究所,陕西,西安,710054 |
| |
| 摘 要： | 采用非本征元件的参数作为本征元件参数函数的自变量的方法，求解MESFET小信号等效电路模型，并彩相对误差来构建目标函数。以FET在零偏置状态的非本征元件值作为初值，通过优化求得了热FET状态的本征元件值，S参数的计算值与实验值吻合得很好，S11的相对误差为0.09%,S12为1.1%,S21为0.08%，S22为 2.26%。该方法收敛快，精度高并且效率高，便于移植到微波器件CAD设计和模拟软件中。
|
| 关 键 词： | CAD 功率GaAsMESFET小信号模型 砷化镓 小信号等效电路模型 FET本征元件 目标函数 参数提取 微波器件 模拟软件 |
SMALL-SIGNAL MODEL PARAMETER EXTRACTION FOR POWER GaAs MESFET's |
| |
| Abstract.SMALL-SIGNAL MODEL PARAMETER EXTRACTION FOR POWER GaAs MESFET''s[J].Chinese Journal of Computational Physics,2002,19(2):127-131. |
| |
| Authors: | Abstract |
| |
| Abstract: | The intrinsic elements are described as functions of the extrinsic parameters. Those relative errors of intrinsic ele-ments are proposed as objective functions. Extrinsic element values of FET's at unbiased state are used as the initial values of the independent variables. Then the intrinsic element values of 'hot' FET's are extracted with the optimization method. The results show that the relative errors of S-parameters are 0.09% for S11 , 1.1% for S12 ,0.08% for S21 ,2.26% for S22, respectively.The key properties of the method are fast convergence, high precision and efficiency. It is easy to transplant the optimization method into microwave CAD tools for cireuit design and simulation. |
| |
| Keywords: | small-signal objective function initial value |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
