Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors |
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Authors: | Anupama Yadav Cameron Glasscock Leonid Chernyak Igor Lubomirsky Sergey Khodorov |
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Institution: | 1. Department of Physics, University of Central Florida, Orlando 32816, FL, USA;2. Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel |
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Abstract: | The impact of 60Co gamma-irradiation on n-channel AlGaN/GaN high-electron-mobility transistors was studied by means of temperature-dependent electron beam-induced current (EBIC) and cathodoluminescence (CL) techniques. For the doses up to ~250?Gy, an enhancement of minority carrier transport was observed as evident from the EBIC measurements. This enhancement is associated with internal electron irradiation induced by the primary gamma photons. For the doses above ~250?Gy, deterioration in minority carrier transport was explained by carrier scattering on radiation-induced defects. It is shown that calculated activation energy from the EBIC and CL measurements follows exactly the same trend, which implies that the same underlying phenomenon is responsible for observed findings. |
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Keywords: | High-electron-mobility transistors activation energy diffusion length lifetime gamma-irradiation |
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