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Enhanced emission of single quantum dot formed by interface fluctuations in photonic-crystal microcavities |
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| Authors: | Tetsu Ito Takehiko Tawara Hiroshi Yamaguchi Mineo Ueki Kouta Tateno Satoshi Mitsugi Hideki Gotoh Eiichi Kuramochi Masaya Notomi |
| Institution: | aNTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan;bNTT Electronic Techno Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan |
| Abstract: | We fabricated photonic-crystal (PhC) microcavities tuned to GaAs quantum dots (QDs) formed by interface fluctuation for the first time and observed the spontaneous emission enhancement in a weak coupling regime. A QD is a very thin GaAs quantum well (QW), and its interface steps exhibit quantum dot-like behavior. The emission intensity from the PhC cavity was stronger than that from the area where no PhC pattern was fabricated and the overall shape of the photoluminescence (PL) agreed with the cavity mode calculated with the three-dimensional (3D) finite-difference time domain (FDTD) method. The spontaneous emission enhancement factor was 10. |
| Keywords: | Photonic crystal Microcavity Quantum dot Interface fluctuations Spontaneous emission enhancement |
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