Self-diffusion of (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers |
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Authors: | Laitinen P Strohm A Huikari J Nieminen A Voss T Grodon C Riihimäki I Kummer M Aystö J Dendooven P Räisänen J Frank W |
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Institution: | Department of Physics, University of Jyv?skyl?, P.O. Box 35, FIN-40351 Jyv?skyl?, Finland. pauli.laitinen@phys.jyu.fi |
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Abstract: | Self-diffusion of implanted (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers has been studied in the temperature range 730-950 degrees C by means of a modified radiotracer technique. The temperature dependences of the diffusion coefficients were found to be Arrhenius-type with activation enthalpies of 3.6 eV and 3.5 eV and preexponential factors of 7.5 x 10(-3) m(2) s(-1) and 8.1 x 10(-3) m(2) s(-1) for (31)Si and (71)Ge , respectively. These results suggest that, as in Ge, in Si(0.20)Ge(0.80) both (31)Si and (71)Ge diffuse via a vacancy mechanism. Since in Si(0.20)Ge(0.80) (71)Ge diffuses only slightly faster than (31)Si , in self-diffusion studies on Si-Ge (71)Ge radioisotopes may be used as substitutes for the "uncomfortably" short-lived (31)Si radiotracer atoms. |
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