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Temperature dependence of the electric field gradient in CdSe and HfO2 |
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| Authors: | H. Barfuß G. Böhnlein H. Hohenstein W. Kreische H. Niedrig H. Appel R. Heidinger J. Raudies G. Then W. -G. Thies |
| Affiliation: | (1) Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, D-8520 Erlangen, Federal Republic of Germany;(2) Institut für Genetik und für Toxikologie von Spaltstoffen, Kernforschungszentrum Karlsruhe GmbH, Postfach 3640, D-7500 Karlsruhe 1, Federal Republic of Germany;(3) Institut für Experimentelle Kernphysik, Universität Karlsruhe, Postfach 3640, D-7500 Karlsruhe, Federal Republic of Germany |
| Abstract: | The time differential perturbed angular correlation technique was applied to study the electric field gradient in the semiconductor CdSe and the insulator HfO2 at different temperatures. Whereas the semiconductor CdSe shows an increasing quadrupole coupling constant with increasing temperature, the insulator HfO2 exhibits no temperature dependence of the electric field gradient over the whole temperature range investigated. |
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