Mixed layer formation of copper overlayers on Ni(1 1 0) surface |
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Authors: | T. Fukuda K. Iwamoto K. Umezawa |
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Affiliation: | a Department of Physical Electronics and Informatics, Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-Ku, Osaka, Osaka 558-8585, Japan b Department of Physics, Science School, Osaka Prefecture University, 1-1 Gakuen-Cho, Naka-Ku, Sakai, Osaka 599-8531, Japan |
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Abstract: | ![]() Copper overlayer formation on the Ni(1 1 0) surface was studied by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Atom-resolved STM images showed that initially deposited Cu is replaced with surface Ni atoms forming atom-size depressions on the Ni(1 1 0) terraces and a Ni-rich quasi-one-dimensional island along the direction. Further Cu deposition yields a mosaic structure on the islands, indicating Cu/Ni mixed layer formation. From the quantitative measurement of the Cu/Ni ratio on the substrate and the islands, impinging Cu will be replaced with surface Ni whereas expelled Ni and directly impinging Cu to the island form the mixed island. The number of Cu atoms in the islands, however, more than the directly impinging Cu, indicate significant Cu/Ni replacement at the periphery of the island. |
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Keywords: | 68.35.Dv 68.37.Ef 68.47.De 68.55.Nq 81.10.Bk |
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