| Novel high-voltage power device based on self-adaptive interface charge |
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| 作者姓名： | 吴丽娟 胡盛东 张波 李肇基 |
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| 作者单位： | State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China College of Communication Engineering,Chengdu University of Information Technology College of Communication Engineering,Chongqing University |
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| 基金项目： | Projects supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721). |
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| 摘 要： | This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor (LDMOS) with selfadaptive interface charge (SAC) layer and its physical model of the vertical interface electric field.The SAC can be self-adaptive to collect high concentration dynamic inversion holes,which effectively enhance the electric field of dielectric buried layer (E I) and increase breakdown voltage (BV).The BV and E I of SAC LDMOS increase to 612 V and 600 V/μm from 204 V and 90.7 V/μm of the conventional silicon-on-insulator,respectively.Moreover,enhancement factors of η which present the enhanced ability of interface charge on E I are defined and analysed.
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| 关 键 词： | self-adaptive interface charge inversion holes dielectric layer electric field breakdown voltage |
| 收稿时间： | 2010-08-26 |
Novel high-voltage power device based on self-adaptive interface charge |
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| Wu Li-Juan,Hu Sheng-Dong,Zhang Bo and Li Zhao-Ji.Novel high-voltage power device based on self-adaptive interface charge[J].Chinese Physics B,2011,20(2):27101-027101. |
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| Authors: | Wu Li-Juan Hu Sheng-Dong Zhang Bo and Li Zhao-Ji |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, Chin;College of Communication Engineering, Chongqing University, Chongqing 400044, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | This paper presents a novel high-voltage lateral double diffused metal--oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (EI) and increase breakdown voltage (BV). The BV and EI of SAC LDMOS increase to 612 V and 600 V/μm from 204 V and 90.7 V/μm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on EI are defined and analysed. |
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| Keywords: | self-adaptive interface charge inversion holes dielectric layer electric field breakdown voltage |
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