| 用同步辐射X射线衍射技术分析GaN/Si外延膜的结构与应变 |
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| 引用本文： | 丁斌峰,潘峰,法涛,成枫锋,姚淑德.用同步辐射X射线衍射技术分析GaN/Si外延膜的结构与应变[J].物理实验,2011(8). |
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| 作者姓名： | 丁斌峰 潘峰 法涛 成枫锋 姚淑德 |
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| 作者单位： | 廊坊师范学院物理与电子信息学院;北京大学核物理与核技术国家重点实验室;陕西理工学院物理系; |
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| 基金项目： | 北京大学核物理与核技术国家重点实验室开放课题支持项目(No.2011PKUC1135) |
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| 摘 要： | 选用有AlN和AlGaN缓冲层的GaN/Si作为测试样品,采用同步辐射X射线衍射(SRXRD)技术对样品外延膜(GaN)的几何结构、晶格常量及其应变进行了分析.结果表明,同步辐射X射线衍射实验可以作为一种有效的技术手段,测试固体结构及应变.
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| 关 键 词： | 同步辐射X射线衍射 晶格常量 布拉格角 应变 |
Determine the structure and strain of GaN/Si epilayer by synchrotron radiation X-ray diffraction |
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| DING Bin-feng,PAN Feng,FA Tao,CHENG Feng-feng,YAO Shu-de.Determine the structure and strain of GaN/Si epilayer by synchrotron radiation X-ray diffraction[J].Physics Experimentation,2011(8). |
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| Authors: | DING Bin-feng PAN Feng FA Tao CHENG Feng-feng YAO Shu-de |
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| Institution: | DING Bin-feng1,2,PAN Feng2,3,FA Tao2,CHENG Feng-feng2,YAO Shu-de2(1.Department of Physics and Electronic Information,Langfang Teachers College,Langfang 065000,China,2.State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871,3.Department of Physics,Shaanxi University of Technology,Hanzhong 723001,China) |
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| Abstract: | Applying synchrotron radiation X-ray diffraction(SRXRD) technology,the geometric structure,lattice constant and strain of GaN/Si with AlGaN and AlN interlayer were analysed and discussed.SRXRD experiment was an effective technique in testing solid structure and analyzing strain. |
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| Keywords: | synchrotron radiation X-ray diffraction lattice constant Bragg angle strain |
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