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Strain-compensated quantum cascade lasers operating at room temperature |
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| Authors: | Feng-Qi Liu Ding Ding Bo Xu Yong-Zhao Zhang Quan-Sheng Zhang Zhan-Guo Wang De-Sheng Jiang Bao-Quan Sun |
| Institution: | a Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China b National Laboratory for Superlattices and Microstructures, Institute of semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China |
| Abstract: | Quantum cascade (QC) lasers based on strain-compensated InxGa(1?x)As/InyAl(1?y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at λ≈3.6–3.7μm at room temperature (34°C) for 20 μm×1.6 mm devices, with peak output powers of  10.6 mW and threshold current density of 2.7 kA/cm2 at this temperature. |
| Keywords: | Quantum cascade laser Strain-compensation Molecular beam epitaxy |
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