Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate |
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Authors: | Mouleeswaran Deivasigamani Tadanobu KoyamaYasuhiro Hayakawa |
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Institution: | Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan |
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Abstract: | Selective epitaxial growth of a GaAs layer on SiNx masked Si-doped semi-insulating (1 0 0) GaAs substrate was performed by current-controlled liquid-phase epitaxy (CCLPE) in the conventional liquid-phase epitaxy. Experiments were carried out with and without the application of electric current. Surface morphology of (1 0 0) facet of the grown layer and the vertical and lateral growth rates were significantly improved under applied electric current. A thick layer of about 330 μm was achieved at relatively low growth time of 6 h with a current density of 20 Acm−2. The epitaxial growth is realized by both electromigration of the solute and supercooling under a constant rate of furnace cooling. The dislocation density of the grown layer was significantly reduced, compared with that of the substrate (4×104 cm2). |
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Keywords: | 66 30 Qa 81 15 Lm 81 05 Ea |
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