Misoriented domain formation in 6H-SiC single crystal |
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Authors: | Bo-Yuan Chen Xi Liu Zhi-Zhan Chen Shao-Hui Chang Bing Xiao Er-Wei Shi |
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Institution: | 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. Graduate School of the Chinese Academy of Sciences, Beijing 100049, China |
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Abstract: | 6H-SiC single crystals were grown by the physical vapor transport (PVT) technique. Misoriented domains (MDs) were observed in as-grown crystals. Raman spectra and X-ray diffraction indicated that the MDs are 4H polytype with either (1 0 1¯ 2) or (1 0 1¯ 6) growth plane. Formation probability of MDs increased continuously as the thermal insulator had been repeatedly used. Simulations based on heat transfer demonstrated that the changes of the temperature and the temperature axial gradient at the center of the growth front were responsible for the phenomenon. The formation mechanism was put forward in terms of atomic structure of various crystal planes. |
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Keywords: | 44 10 +i 61 72 -y 81 10 Aj 81 10 Bk |
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