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Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy |
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| Authors: | Min Yang Hyung Soo Ahn Tomoyuki Tanikawa Yoshio Honda Masahito Yamaguchi Nobuhiko Sawaki |
| Institution: | 1. Department of Nano Semiconductor, Korea Maritime University, Youngdo-ku, Busan 606-791, Korea;2. Department of Electronics and Akasaki Research Center, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan;3. Venture Business Laboratory, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan |
| Abstract: | Semi-polar (1 1 2¯ 2) GaN layers were selectively grown by metal organic chemical vapor phase epitaxy on patterned Si (3 1 1) substrates without SiO2 amorphous mask. The (1 1 2¯ 2) GaN layers could be selectively grown only on Si (1 1 1) facets when the stripe mask width was narrower than 1 μm even without SiO2. Inhomogeneous spatial distribution of donor bound exciton (DBE) peak in low-temperature cathodoluminescence (CL) spectra was explained by the difference of growth mode before and after the coalescence of stripes. It was found that the emission intensity related crystal defects is drastically decreased in case of selective growth without SiO2 masks as compared to that obtained with SiO2 masks. |
| Keywords: | 81 15 Gh 78 55 Cr |
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