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Properties of gallium- and aluminum-doped bulk ZnO obtained from single-crystals grown by liquid phase epitaxy |
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| Authors: | Jun Kobayashi Naoki Ohashi Hideyuki Sekiwa Isao Sakaguchi Miyuki Miyamoto Yoshiki Wada Yutaka Adachi Kenji Matsumoto Hajime Haneda |
| Institution: | 1. Tokyo research Laboratory, Mitsubishi Gas Chemical Co. Ltd., 1-1 Niijyuku, 6-chome Katsushika-ku, Tokyo 125-0051, Japan;2. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;3. Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga Koen, Kasuga, Fukuoka 816-8580, Japan |
| Abstract: | Bulk properties of gallium (Ga)- and aluminum (Al)-doped zinc oxide (ZnO) were studied using bulky single-crystalline thick films grown by liquid phase epitaxy (LPE). The highest possible dopant concentration was 1×1019 cm–3 for LPE growth at around 800 °C. The electron concentration was nearly same to the Ga and Al concentrations. The donor binding energy decreased to nearly zero with an increase in dopant concentration, and electron mobility of the sample with relatively high dopant concentration (1×1019 cm–3) was more than 60 cm2 V–1 s–1 at room temperature. The LPE technique is a potential solution for the production of ZnO for optical applications because the well-defined excitonic luminescence could be seen from the LPE-grown-doped single-crystals. |
| Keywords: | 81 10 Fq 81 05 Dz 71 55 Gs |
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