One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy |
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Authors: | Daisuke Iida Motoaki IwayaSatoshi Kamiyama Hiroshi AmanoIsamu Akasaki |
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Institution: | Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan |
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Abstract: | The selective regrowth of GaN during sidewall-seeded epitaxial lateral overgrowth was performed. In addition to adjusting the V/III ratio, control of offset angle of the sidewall was found to be effective for realizing one-sidewall-seeded a-plane (1 1 2¯ 0) GaN on r-plane (1 1¯ 0 2) sapphire. The number of coalescence regions on the grooves was reduced, and threading-dislocation and stacking-fault densities as low as 106–107 cm−2 and 103–104 cm−1, respectively, were successfully realized. |
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Keywords: | 78 55 Cr 81 15 Kk |
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