HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice |
| |
Authors: | Zhen-Yu Li Tien-Chang Lu Hao-Chung Kuo Shing-Chung Wang Ming-Hua Lo KM Lau |
| |
Institution: | 1. Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;2. Department of Electronic & Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
| |
Abstract: | A high-quality AlN/GaN distributed Bragg-reflectors (DBR) was successfully grown on sapphire substrate by low-pressure metal-organic chemical vapor deposition using ultra-thin AlN/GaN superlattice insertion layers (SLILs). The reflectivity of AlN/GaN DBR with ultra-thin AlN/GaN SLIL was measured and achieved blue peak reflectivity of 99.4% at 462 nm. The effect of ultra-thin AlN/GaN superlattice insertion layer was examined in detail by transmission electron microscopy, and indicated that the crack of AlN/GaN DBR can be suppress by inserting AlN/GaN SLIL. For electronic properties, the turn on voltage is about 4.1 V and CW laser action of vertical-cavity surface-emitting laser (VCSEL) was achieved at a threshold injection current of 1.4 mA at 77 K, with an emission wavelength of 462 nm. |
| |
Keywords: | 61 82 Fk 68 65 Fg 81 15 Gh |
本文献已被 ScienceDirect 等数据库收录! |
|