Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE |
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Authors: | Bei Ma Reina MiyagawaWeiguo Hu Da-Bing LiHideto Miyake Kazumasa Hiramatsu |
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Institution: | Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University 1577 Kurimamachiya, Tsu 514-8507, Japan |
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Abstract: | Approximately 2-μm-thick Si-doped a-plane GaN films with different doping concentrations were grown on approximately 8-μm-thick undoped a-plane GaN/r-sapphire by metal organic vapor phase epitaxy (MOVPE). The structural and electrical properties of the Si-doped a-plane GaN films were investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and temperature-dependent Hall measurement. The results showed that a small amount of Si doping can improve the surface morphology and decrease the density of pits. Upon increasing the CH3SiH3 flow rate, the crystalline quality of the (0 0 0 2) plane was slightly improved. The highest room-temperature mobility of 83.4 cm2/Vs was obtained at a carrier density of 6.2×1018 with a CH3SiH3 flow rate of 10 sccm. |
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Keywords: | 81 15 Kk 78 55 Cr |
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