Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth |
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Authors: | AY Polyakov NB Smirnov AV Govorkov AV Markov EB Yakimov PS Vergeles H Amano T Kawashima |
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Institution: | 1. Institute of Rare Metals, Moscow, 119017, B. Tolmachevsky, 5, Russia;2. Institute of Microelectronics Technology, RAS, Chernogolovka, 142432, Russia;3. Department of Materials Science and Engineering, Meijo University, Nagoya, Japan |
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Abstract: | Electrical properties, deep traps spectra and structural performance were studied for m-GaN films grown on m-SiC substrates by standard metalorganic chemical vapor deposition (MOCVD) and by MOCVD with lateral overgrowth (ELO) or sidewall lateral overgrowth (SELO). Standard MOCVD m-GaN films with a very high dislocation density over 109 cm−2 are semi-insulating n-type with the Fermi level pinned near Ec−0.7 eV when grown at high V/III ratio. For lower V/III they become more highly conducting, with the electrical properties still dominated by a high density (∼1016 cm−3) of Ec−0.6 eV electron traps. Lateral overgrowth that reduces the dislocation density by several orders of magnitude results in a marked increase in the uncompensated shallow donor density (∼1015 cm−3) and a substantial decrease of the density of major electron traps at Ec−0.25 and Ec−0.6 eV (down to about 1014 cm−3). Possible explanations are briefly discussed. |
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Keywords: | 61 72 Ff 68 37 Hk 73 61 Ey 71 55 Eq |
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