Epitaxial growth of InN films on lattice-matched EuN buffer layers |
| |
| Authors: | K. Shimomoto J. Ohta T. Fujii R. Ohba A. Kobayashi M. Oshima H. Fujioka |
| |
| Affiliation: | 1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan;2. Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656, Japan;3. Core Research for Evolutional Science and Technology of Japan Science and Technology Corporation (JST-CREST), 3-5 Chiyoda-ku, Tokyo 102-0075, Japan |
| |
| Abstract: | ![]()
Indium nitride (InN) films have been grown on lattice matched europium nitride (EuN) buffer layers by pulsed laser deposition (PLD) and their structural properties have been investigated. It has been revealed that the growth of EuN films on Al2O3 (0 0 0 1) substrates leads to the formation of polycrystalline EuN films, whereas epitaxial EuN (1 1 1) films grow on MgO (1 1 1) substrates at 860 °C. By using the EuN (1 1 1) films as buffer layers for InN growth, we have succeeded in the epitaxial growth of InN (0 0 0 1) films at 490 °C with an in-plane epitaxial relationship of [1 1 2¯ 0]InN∥[1 1¯ 0]EuN∥[1 1¯ 0]MgO, which minimized the lattice mismatch between InN and EuN. |
| |
| Keywords: | 81.05.Ea 81.15.Fg 68.55.Ac |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
