Growth and properties of semi-polar GaN on a patterned silicon substrate |
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Authors: | Nobuhiko Sawaki Toshiki Hikosaka Norikatsu Koide Shigeyasu Tanaka Yoshio HondaMasahito Yamaguchi |
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Institution: | Department of Electronics and Akasaki Research Center, Nagoya University, Furo-cho 3C-1-631, Chikusa-ku, Nagoya 464-8603, Japan |
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Abstract: | Adopting anisotropy etching method, a (1 1 1) facet of Si is obtained on a Si substrate and selective area growth (SAG) of GaN is performed with metal-organic vapor phase epitaxy on the facet. The epitaxial lateral overgrowth of (1 1¯ 0 1), (1 1 2¯ 2) GaN is investigated on (0 0 1) and (1 1 3) Si substrate, respectively, and the incorporation properties of Si, C, and Mg elements are discussed in relation to the atomic configuration on the surface. Analyzing the optical and electrical properties of C-doped (1 1¯ 0 1) GaN layer, it is shown that carbon creates a shallow acceptor level. On the thus prepared (1 1¯ 0 1) GaN layer, a light emitting diode (LED) with a C-doped p-type layer is fabricated. |
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Keywords: | 81 15 Gh 68 37 Lp 73 40 Kp 73 61 Ey 78 55 Cr 78 60 Fi |
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