Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications |
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Authors: | HPD Schenk SI Borenstain A Berezin A Schön E Cheifetz A Dadgar A Krost |
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Institution: | 1. El-Mul Technologies Ltd., P.O. Box 571 Soreq, Yavne 81104, Israel;2. Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften, Abteilung Halbleiterepitaxie, Postfach 4120, 39016 Magdeburg, Germany |
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Abstract: | A comparative study of cathodoluminescence ultraviolet photon yields and decay times of large area GaN and zinc oxide (ZnO) layers grown for scintillator applications by metalorganic vapor phase epitaxy is presented. Silicon-doped GaN and non-intentionally-doped ZnO yield up to 1.4±0.2 photons/kVe− and 1.3±0.2 photons/kVe– at room-temperature, respectively. For GaN the decay times scatter between 0.4 and 0.9 ns, and for ZnO between 2.5 and 3.0 ns. The GaN and the ZnO absorption coefficients, α, internal efficiencies, ηi, and radiative constants, B, are determined. The characteristics of thin-film scintillators based on these materials are compared with commercially available granular scintillators. |
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Keywords: | 29 30 Ep 29 30 Dn 29 40 Mc 71 55 Eq 71 55 Gs 78 20 Ci 78 47 Cd 78 60 Hk 78 66 Fd 78 66 Hf |
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