Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers |
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Authors: | SR Xu Y HaoJC Zhang XW ZhouLA Yang JF ZhangHT Duan ZM LiM Wei SG HuYR Cao QW ZhuZH Xu WP Gu |
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Institution: | Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology School of Microelectronics, Xidian University, Xi’an 710071, China |
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Abstract: | Non-polar (1 1 2¯ 0) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1 1¯ 0 2) sapphire substrate. We report on an approach of using AlN/AlGaN superlattices (SLs) for crystal quality improvement of a-plane GaN on r-plane sapphire. Using X-ray diffraction and atomic force microscopy measurements, we show that the insertion of AlN/AlGaN SLs improves crystal quality, reduces surface roughness effectively and eliminates triangular pits on the surface completely. |
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Keywords: | 81 15 Kk 78 55 Cr |
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