The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution

The molecular beam epitaxy (MBE) growth of GaAs and InAs quantum dots on etched mesas has been studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The [0 1 1]-oriented mesas are etched into (1 0 0) GaAs substrates, exposing (5 3 3)B sidewall facets. At a substrate temperature of 610 °C a top (1 0 0) plane is seen to evolve on a ridge mesa structure. Alternatively, if the overgrowth is carried out at 630 °C no such facet is seen, and the top ridge remains unchanged during GaAs growth. By controlling the mesa shape, either ordered lines of dots can be grown or the dot density can be varied from <5×10⁸ cm⁻² to >1×10¹¹ cm⁻² on the same substrate in pre-defined regions. The dot distribution observed on the mesa sidewalls and top is discussed in terms of net migration of adatoms from different facets, underlying step density, step height and surface curvature of the mesa top.