Low-temperature photoluminescence in germanium irradiated by fast neutrons

This study was carried out to investigate low-temperature (T=4.2 K) photoluminescence caused by interdopant recombination transitions in n-germanium irradiated by fast (epicadmium) reactor neutrons and subjected to “complete” annealing (+450°C, 24 h). It is shown that lines of interdopant radiative recombination observed in initial and in irradiated and annealed specimens are caused by both initial impurities and (mainly) dopants (As and Ga) implanted by transmutation as well as by defect sets stable at long-time high-temperature annealing that do not contain fine dopants. Belarusian State University, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 479–482, July–August, 1997.