| 中性(NH4)2S溶液钝化GaAs(100)表面的研究 |
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| 引用本文： | 袁泽亮,丁训民,胡海天,李哲深,杨建树,缪熙月,陈溪滢,曹先安,侯晓远,陆尔东,徐世红,徐彭寿,张新夷.中性(NH4)2S溶液钝化GaAs(100)表面的研究[J].物理学报,1998,47(1):68-74. |
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| 作者姓名： | 袁泽亮 丁训民 胡海天 李哲深 杨建树 缪熙月 陈溪滢 曹先安 侯晓远 陆尔东 徐世红 徐彭寿 张新夷 |
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| 作者单位： | (1)复旦大学应用表面物理国家重点实验室，上海 200433; (2)中国科学技术大学国家同步辐射实验室，合肥 230019 |
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| 基金项目： | 国家教育委员会跨世纪人才培养计划和国家杰出青年科学基金资助的课题- |
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| 摘 要： | 采用同步辐射光电子能谱(SRPES)结合扫描电子显微镜(SEM)和称量法，研究了中性(NH4)2S溶液钝化GaAs(100)表面，并与常规(NH4)2S碱性溶液钝化方法进行了比较- SRPES结果表明该处理方法可以产生较厚的Ga硫化物层和较强的Ga—S键，Ga的硫化物有好的稳定性-称量法表明该方法有更低的腐蚀速率-SEM结果表明该方法钝化处理的GaAs表面所产生的腐蚀坑数目少，直径小-
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| 关 键 词： | SEM 表面钝化 砷化镓 中性硫化铵溶液 |
| 收稿时间： | 5/4/1997 12:00:00 AM |
INVESTIGATION OF NEUTRALIZED (NH4)2S SOLUTION-PASSIVATED GaAs(100) SURFACES |
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| YUAN ZE-LIANG,DING XUN-MIN,HU HAI-TIAN,LI ZHE-SHEN,YANG JIAN-SHU,MIAO XI-YUE,CHEN XI-YING,CAO XIAN-AN,HOU XIAO-YUAN,LU ER-DONG,XU SHI-HONG,XU PENG-SHOU and ZHANG XIN-YI.INVESTIGATION OF NEUTRALIZED (NH4)2S SOLUTION-PASSIVATED GaAs(100) SURFACES[J].Acta Physica Sinica,1998,47(1):68-74. |
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| Authors: | YUAN ZE-LIANG DING XUN-MIN HU HAI-TIAN LI ZHE-SHEN YANG JIAN-SHU MIAO XI-YUE CHEN XI-YING CAO XIAN-AN HOU XIAO-YUAN LU ER-DONG XU SHI-HONG XU PENG-SHOU and ZHANG XIN-YI |
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| Abstract: | Synchrotron radiation photoelectron spectroscopy (SRPES) combined with scanning electron microscopy (SEM) and gravimetric method is used to study the neutralized (NH4)2S-passivated GaAs(100) surfaces- Compared to the conventional (NH4)2S alkaline solution treatment, a thicker Ga sulfide layer and stronger Ga—S bonding on GaAs surface can be formed by dipping GaAs in neutralized (NH4)2S solution- Gravimetric data show that the etching rate of GaAs in neutralized (NH4)2S solution is about 15% lower than that in the conventional (NH4)2S solution- From SEM observation, only fewer number of etching pits with smaller size on the neutralized (NH4)2S treated GaAs surfaces can be found- |
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