GaN-nanowire-based dye-sensitized solar cells |
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Authors: | X?Y?Chen C?T?Yip M?K?Fung A?B?Djuri?i? W?K?Chan |
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Institution: | (1) Shanghai Institute of Ceramics, Chinese Academy of Sciences, Dingxi Rd 1295, Shanghai, 200050, China;(2) College of Material Science and Engineering, Shanghai University, Shanghai, 200072, China; |
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Abstract: | GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental
for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate
DSSCs based on GaN/gallium oxide and GaN/TiO
x
core–shell structures, and we show that coating of GaN nanowires with a TiO
x
shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit
current density of 1.83 mA/cm2 and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination. |
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Keywords: | |
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