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Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells
Authors:K. K. Nagaraja  M. P. Telenkov  I. P. Kazakov  S. A. Savinov  Yu. A. Mityagin
Affiliation:1.Lebedev Physical Institute,Russian Academy of Sciences,Moscow,Russia;2.National University of Science and Technology “MISiS”,Moscow,Russia;3.National Research Nuclear University “MEPhI”,Moscow,Russia
Abstract:This study is devoted to the development of resonant-tunneling structures of quantum wells implementing resonant matching of lower subbands of size quantization in an electric field of the p-i-n junction of photovoltaic elements. The method for controlling the lower subband position in quantum wells by introducing a series of the tunnel-transparent barriers into a quantum well is proposed. The possibility of varying the level position in deep quantum wells in a wide range up to the continuous spectrum is demonstrated on a grown model structure; in this case, agreement between calculated and experimental subband positions is achieved.
Keywords:
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