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Non-equilibrium spin accumulation in ferromagnetic single-electron transistors |
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| Authors: | A. Brataas Yu.V. Nazarov J. Inoue G.E.W. Bauer |
| Affiliation: | (1) Delft University of Technology, Laboratory of Applied Physics and Delft Institute of Microelectronics and Submicrontechnology (DIMES), 2628 CJ Delft, The Netherlands, NL;(2) Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands, NL;(3) Nagoya University, Department of Applied Physics, Nagoya, Aichi 46401, Japan, JP |
| Abstract: | We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation. Received 6 May 1998 |
| Keywords: | PACS. 73.40.Gk Tunneling - 75.70.-i Magnetic films and multilayers - 73.23.Hk Coulomb blockade single-electron tunneling - 75.70.Pa Giant magnetoresistance |
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