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| MOS器件辐照过程和辐照后效应模拟 | |
| 引用本文： | 何宝平,张凤祁,姚志斌. MOS器件辐照过程和辐照后效应模拟[J]. 计算物理, 2007, 24(1): 109-115 |
| 作者姓名： | 何宝平 张凤祁 姚志斌 |
| 作者单位： | 西北核技术研究所,陕西,西安,710613;西北核技术研究所,陕西,西安,710613;西北核技术研究所,陕西,西安,710613 |
| 摘 要： | 模拟MOS器件脉冲电离辐射响应和长时间恢复效应.假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理.在整个退火恢复期,采用卷积模型并考虑了栅偏置压的效应.模拟结果表明:退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率. |
| 关 键 词： | 电离辐射 界面态 退火 模拟 |
| 文章编号： | 1001-246X（2007）01-0109-07 |
| 收稿时间： | 2005-08-12 |
| 修稿时间： | 2005-12-07 |
Simulation of MOS Devices in Radiation and Post-irradiation |
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| HE Baoping,ZHANG Fengqi,YAO Zhibin. Simulation of MOS Devices in Radiation and Post-irradiation[J]. Chinese Journal of Computational Physics, 2007, 24(1): 109-115 | |
| Authors: | HE Baoping ZHANG Fengqi YAO Zhibin |
| Affiliation: | Northwest Institute of Nuclear Technology, Xi'an 710613, China |
| Abstract: | The radiation response and long term recovery in MOS due to a pulse radiation are studied.It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post_irradiation recovery.The model uses convolution theory and considers the bias change in the recovery period.It shows that the bias in the post_irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate. |
| Keywords: | ionizing radiation interface state annealing simulation |
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