Temperature behavior of implanted and pulsed laser irradiated GaAs

Recent studies have shown that the Low-Power Pulsed-Laser Annealing (LPPLA) of ion-implanted GaAs specimens can be realized in a power-density window in which a complete structural reordering is guaranted. As the experimentally employed conditions allow us to describe the theoretical problem in an unidimensional space domain, we describe here a method to investigate the in-depth temperature behavior during the low-power pulsed-laser irradiation of ion-implanted semiconductors. The application of this method to GaAs specimens shows that the upper limit of the energy density window is connected with the exceeding of the critical temperature T_c below which the As evaporation rate is negligible.