Vibrational modes and infrared absorption of interstitial oxygen in silicon |
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Authors: | C. S. Chen D. K. Schroder |
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Affiliation: | (1) Center for Solid State Electronics Research, Arizona State University, 85287 Tempe, AZ, USA;(2) Present address: Department of Physics, Wuhan University, Wuhan, PR China |
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Abstract: | A quasi-linear Si2O molecule model (QLMM) is suggested from an analysis of the configuration and the interactions of an isolated oxygen atom with its neighbor silicon atoms. The vibrational modes are assigned and the infrared absorption spectra are calculated in detail with the model. The theoretical results are in reasonably good agreement with reported experimental values. This agreement shows that for the analysis of the vibrational modes of the interstitial oxygen atom in silicon crystals it is not necessary to consider the coupling of the molecule with the rest of the lattice. The interaction of the oxygen atom with its six second-nearest silicon atoms only causes the level separation of the2 mode and the formation of the fine structure. |
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Keywords: | 61.70-r 71.55-i 78.50-w |
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