Zigzag型石墨纳米带电子结构和输运性质的第一性原理研究

采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair 边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现，完整边缘的zigzag型石墨纳米带是具有一定能隙的半导体带，边缘空位缺陷的存在使得纳米带能隙变小，且缺陷浓度越大，能隙越小，并发生了半导体-金属转变. 利用这些研究结果，将有助于在能带工程中实现其电子结构裁剪. 关键词： 石墨纳米带 空位缺陷 电子结构 输运性质

First-principles study of electronic structure and transport properties of zigzag graphene nanoribbons

By performing first-principles electronic structure and transport calculations, we have demonstrated the electronic structure and transport properties of single layer zigzag graphene nanoribbons with armchair edges and the effect of edge-vacancy defects. It is shown that perfect zigzag graphene nanoribbons are semiconductor with certain energy gaps which will become smaller due to the edge-vacancy defects combining with semiconductor-metal transition. This result may contribute to the electronic structure sewing of the graphene nanoribbons in the energy-band engineering.