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Blue emission from arsenic doped gallium nitride |
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| Authors: | A J Winser I Harrison S V Novikov C S Davis R Campion T S Cheng C T Foxon |
| Institution: | a School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK b School of Electrical and Electronic Engineering, University of Nottingham, Nottingham NG7 2RD, UK |
| Abstract: | We have observed strong blue emission at room temperature from arsenic doped GaN samples grown by molecular beam epitaxy. Similar results were obtained for samples doped with both arsenic dimers and tetramers. The origin of this blue emission is discussed and a growth model proposed to account for our observations. We propose that arsenic doped GaN may be a suitable replacement for (InGa)N as the active region for blue light emitting devices. |
| Keywords: | A3 Molecular beam epitaxy B1 Nitrides B2 Semi conducting III-V materials |
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