Improved Single Crystal Growth of the Boron Sillenite “Bi24B2O39” and Investigation of the Crystal Structure

The boron sillenite, up to now known as the 12:1 compound Bi₂₄B₂O₃₉ in the system Bi₂O₃ – B₂O₃ andcrystallizing in the space group I23, melts incongruently at 655 °C only about 25 K above the eutectic tie line and corresponding to a steep liquidus line. Single crystals with dimensions larger then 1 cm ³ have been successfully grown in [100], [110], and [111] direction by an improved Top Seeded Solution Growth (TSSG) technique equipped with crucible weighing, accelerated crystal rotation technique and air‐cooled pulling rod. The structure of the boron sillenite was analyzed by X‐ray diffraction method, which was possible due to the high crystalline quality achieved. A defect‐free sublattice corresponding to a Bi‐O framework is isostructural with all sillenites, but a 2 Å environment around the origin is occupied by different cations with different population coefficients. The best calculation results in the formula Bi_24.5BO_38.25 which is more Bi‐rich than the 12:1 assumption.