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Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy |
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| Authors: | S.C. Su Y.M. Lu Z.Z. Zhang D.Z. Shen J.Y. Zhang X.W. Fan |
| Affiliation: | a Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, China b Graduate School of the Chinese Academy of Sciences, Beijing 100049, China c College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China |
| Abstract: | ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall networks were crystallized in a wurtzite structure with their height parallel to the 〈0 0 0 1〉 direction. Photoluminescence (PL) of the ZnO nanowall networks exhibited free excitons (FEs), donor-bound exciton (D0X), donor-acceptor pair (DAP), and free exciton to acceptor (FA) emissions. The growth mechanism of the ZnO nanowall networks was discussed, and their hydrogenation was also studied. |
| Keywords: | 78.66.Hf 07.30.-t 61.82.Rx 68.47.Fg |
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