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A nanoindentation analysis of the influence of lattice mismatch on some wide band gap semiconductor films |
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| Authors: | R. Navamathavan Seong-Ju Park Chi Kyu Choi |
| Affiliation: | a Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Ara 1 Dong, Jeju 690 756, South Korea b Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea c Chemical Metrology and Materials Evaluation Division, Korea Research Institute of Standards and Science, Yuseong, Daejon 305-600, South Korea |
| Abstract: | Nanoindentation studies are carried out on epitaxial ZnO and GaN thin films on (0 0 0 1) sapphire and silicon substrates, respectively. A single discontinuity (‘pop-in’) in the load-indentation depth curve is observed for ZnO and GaN films at a specific depths of 13-16 and 23-26 nm, respectively. The physical mechanism responsible for the ‘pop-in’ event in these epitaxial films may be due to the interaction behavior of the indenter tip with the pre-existing threading dislocations present in the films during mechanical deformation. It is observed that the ‘pop-in’ depth is dependent on lattice mismatch of the epitaxial thin film with the substrate, the higher the lattice mismatch the shallower the critical ‘pop-in’ depth. |
| Keywords: | 81.15.Cd 81.15.Gh 81.05.Dz 62.20.Fe 62.25.+g |
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