Analysis of periodic Mo/Si multilayers: Influence of the Mo thickness |
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Authors: | H. Maury K. Le Guen A. Giglia F. Bridou P. Jonnard |
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Affiliation: | a UPMC Univ. Paris 06, CNRS-UMR 7614, Laboratoire de Chimie Physique-Matière et Rayonnement, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05, France b TASC-INFM National Laboratory, S.S. 14, Km 163.5 in Area Science Park, I-34012 Basovizza, Trieste, Italy c Laboratoire Charles Fabry de l’Institut d’Optique, CNRS, Univ. Paris-Sud, Campus Polytechnique, RD128, F-91127 Palaiseau Cedex, France |
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Abstract: | A set of Mo/Si periodic multilayers is studied by non-destructive analysis methods. The thickness of the Si layers is 5 nm while the thickness of the Mo layers changes from one multilayer to another, from 2 to 4 nm. This enables us to probe the effect of the transition between the amorphous and crystalline state of the Mo layers near the interfaces with Si on the optical performances of the multilayers. This transition results in the variation of the refractive index (density variation) of the Mo layers, as observed by X-ray reflectivity (XRR) at a wavelength of 0.154 nm. Combining X-ray emission spectroscopy (XES) and XRR, the parameters (composition, thickness and roughness) of the interfacial layers formed by the interaction between the Mo and Si layers are determined. However, these parameters do not evolve significantly as a function of the Mo thickness. It is observed by diffuse scattering at 1.33 nm that the lateral correlation length of the roughness strongly decreases when the Mo thickness goes from 2 to 3 nm. This is due to the development of Mo crystallites parallel to the multilayer surface. |
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Keywords: | Superlattices Roughness X-ray emission X-ray reflection X-ray scattering Crystalline-amorphous interfaces Molybdenum Silicon |
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