| 感应耦合等离子体刻蚀p-GaN的表面特性 |
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| 引用本文： | 吕玲,龚欣,郝跃.感应耦合等离子体刻蚀p-GaN的表面特性[J].物理学报,2008,57(2):1128-1132. |
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| 作者姓名： | 吕玲 龚欣 郝跃 |
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| 作者单位： | 西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071 |
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| 基金项目： | 国家重点基础研究发展计划(973)项目(批准号：51327020301)资助的课题. |
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| 摘 要： | 研究了p-GaN材料经感应耦合等离子体(ICP)刻蚀后的表面特性，并用不同的方法对刻蚀表面进行处理.利用原子力显微镜(AFM)和X射线光电子能谱(XPS)对刻蚀样品进行分析，并在样品表面制作Ni/Au电极，进行欧姆接触特性的测试.实验结果表明了NaOH溶液处理表面对改善材料表面和欧姆接触特性是比较有效的.
关键词：
GaN
感应耦合等离子刻蚀
表面处理
欧姆接触
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| 关 键 词： | GaN 感应耦合等离子刻蚀 表面处理 欧姆接触 |
| 文章编号： | 1000-3290/2008/57(02)/1128-05 |
| 收稿时间： | 2007-03-31 |
| 修稿时间： | 2007-06-21 |
Properties of p-type GaN etched by inductively coupled plasma and their improvement |
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| Lü Ling,Gong Xin,Hao Yue.Properties of p-type GaN etched by inductively coupled plasma and their improvement[J].Acta Physica Sinica,2008,57(2):1128-1132. |
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| Authors: | Lü Ling Gong Xin Hao Yue |
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| Abstract: | Our preseut research was focused on the surface properies of the p-type gallium nitride (p-GaN) etched by inductively coupled plasma (ICP). Different methods were used to process the etched surface. The surface condition was investigated by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The current voltage measurement was used to show the I-V characteristics of Ni/Au contacts on the sample. The experimental result demonstrated that the NaOH treatment is effective in improving the material surface and the ohmic contact properties. |
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| Keywords: | GaN inductively coupled plasma etching surface treatments ohmic contact |
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