Spectral cut-off in the efficiency of the resistive state formation caused by absorption of a single-photon in current-carrying superconducting nano-strips |
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| Authors: | A.?Semenov mailto:alexei.semenov@dlr.de" title=" alexei.semenov@dlr.de" itemprop=" email" data-track=" click" data-track-action=" Email author" data-track-label=" " >Email author,A.?Engel,H.-W.?Hübers,K.?Il'in,M.?Siegel |
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| Affiliation: | (1) DLR Institute of Planetary Research, Rutherfordstr. 2, 12489 Berlin, Germany;(2) Physics Institute, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland;(3) Institute of Micro- and Nano-Electronic Systems, University of Karlsruhe, Hertzstr. 16, 76187 Karlsruhe, Germany |
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| Abstract: | ![]()
We have studied supercurrent-assisted formation of the resistive state in nano-structured disordered superconducting Nb(N) films after absorption of a single optical to near-infrared photon. The efficiency of the resistive state formation has a pronounced spectral cut-off; corresponding threshold photon energy decreases with the bias current. Analysis of the experimental data in the framework of the refined hot-spot model suggests that the quantum yield for near-infrared photons increases with the photon energy. Relaxation of the resistive state depends on the photon energy making the phenomena feasible for the development of energy resolving single-photon detectors. |
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